IPI12CN10N G

Manufacturer Product Number:

IPI12CN10N G

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPI12CN10N G-DG

Description:

MOSFET N-CH 100V 67A TO262-3

Detailed Description:

N-Channel 100 V 67A (Tc) 125W (Tc) Through Hole PG-TO262-3

Inventory:

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12802993

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IPI12CN10N G Technical Specifications

Category

FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer

Infineon Technologies

Packaging

-

Series

OptiMOS™

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

67A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12.9mOhm @ 67A, 10V

Vgs(th) (Max) @ Id

4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs

65 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4320 pF @ 50 V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I2PAK, TO-262AA

Base Product Number

IPI12C

Datasheet & Documents

Datasheets

Additional Information

Other Names

IPI12CN10NG

IPI12CN10N G-DG

SP000208928

Standard Package

500

Environmental & Export Classification

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

DIGI Certification

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

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